Rogueware
NX200M 512GB PCIe Gen3 x4 M.2 SSD (RWS512GNX200M)
- Micron High Density 3D TLC NAND Flash Technology
- Advanced NANDXtend ECC and Data Protection Technology
- Enhanced 3D NAND LDPC, Endurance and Retention
- SLC Caching for Optimal Sustained Performance
- Supports S.M.A.R.T., TRIM Command, and NCQ
- Supports TCG and AES Encryption
- Interface: M.2 PCIe Gen3 x4 NVMe
- Form Factor: M.2 2280
- Sequential Read: Up To 2100MB/s
- Sequential Write: Up To 1500MB/s
- Total Bytes Written (Up to): 280TB
- MTBF: 1.5 Million
Model: NX200M 512GB
Mnf. #: RWS512GNX200M
SKU: 77448
Warranty: 3 years Carry-in, Local
Rogueware NX200M PCIe Gen3 NVME SSD
The Rogueware NX200S NVMe PCIe Gen3 x4 M.2 SSD Series provides strong storage performance with great speeds offering read speeds of up to 2,400MB/sec. All-new extreme performance controller delivers up to 2,400MB/sec sequential read, and up to 1,700MB/s sequential write, for fast read, write and response times.
General |
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| Manufacturer Code | RWS512GNX200M | |
| Model | NX200M 512GB | |
| Product Line | NX200M | |
| Product Type | Internal SSD | |
| Intended Use | ||
Specifications |
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| Capacity | 512 GB | |
| Form Factor | M.2 M.2 2280 | |
| Interface | PCIe Gen 3.0 x4 | |
| Mean Time Between Failures (MTBF) | 1.5M Hours | |
| TBW | 280 TB | |
Performance |
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| Read Speed | Up to 2,100 MB/s | |
| Write Speed | Up to 1,500 MB/s | |
| Random IOPS Read | 240000 | |
| Random IOPS Write | 250000 | |